2026-11-09 Mitsubishi Electric Corporation “November 9, 2026 R&D Semiconductor Devices demonstrates world's first suppression of frequency dispersion in GaN transistors using GaN substrates. In a high-frequency transistor (GaN transistor) in which a GaN epitaxial layer (epita layer) is deposited on a gallium nitride (GaN) substrate, we have demonstrated for the first time in the world that the effects of frequency dispersion caused by crystal defects can be elucidated and that frequency dispersion can be significantly suppressed.”